of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

N-Channel IGBT

HGTP20N60B3

HGTP20N60C3

HGTP20N60C3R

HGTP20N35G3VL

HGTP20N36G3VL

HGTP2N120BN

HGTP2N120BND

HGTP2N120CN

HGTP2N120CND

HGTP10N120BN

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